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| 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-Channel devices General Description The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Device 2N7002 2N7002-G Package BVDSS/BVDGS (V) 60 RDS(ON) (max) ID(ON) (min) () 7.5 (A) 0.5 TO-236AB (same as SOT-23) -G indicates package is RoHS compliant (`Green') Pin Configuration DRAIN Absolute Maximum Ratings Parameter DRAIN to SOURCE voltage DRAIN to GATE voltage GATE to SOURCE voltage Operating and storage temperature Soldering temperature1 Value BVDSS BVDGS 30V -55C to +150C +300C GATE SOURCE TO-236AB (Top View) Product Marking Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Notes: 1. Distance of 1.6mm from case for 10 seconds. 702 = 2-week alpha date code 2N7002 Electrical Characteristics (T =25C unless otherwise specified) A Symbol BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS t(ON) t(OFF) VSD trr Parameter Drain-to-source breakdown voltage Gate threshold voltage Change in VGS(th) with temperature Gate body leakage current Zero gate voltage drain current ON-state drain current Static drain-to-source ON-state resistance Change in RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON time Turn-OFF time Diode forward voltage drop Reverse recovery time Min 60 1.0 500 80 - Typ 1.2 400 Max 2.5 -5.5 100 1.0 500 7.5 7.5 1.0 50 25 5 20 20 - Units V V mV/ C nA A mA %/ C mmho O O Conditions VGS = 0V, ID = 10A VGS = VDS, ID = 250A VGS = VDS, ID = 250A VGS = 20V, VDS = 0V VGS = 0V, VDS = Max rating VGS = 0V, VDS = 0.8Max rating, TA = 125OC VGS = 10V, VDS = 25V VGS = 5.0V, ID = 50mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA VDS = 25V, ID = 500mA VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 30V, ID = 200mA, RGEN = 25 VGS = 0V, ISD = 200mA VGS = 0V, ISD = 800mA pF ns V ns Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Thermal Characteristics Device 2N7002 Package TO-236AB ID (continuous)* (mA) 115 ID (pulsed) (mA) 800 Power Dissipation @TA = 25OC (W) 0.36 jc O ( C/W) 200 ja O ( C/W) 350 IDR* (mA) 115 IDRM (mA) 800 Notes: * ID (continuous) is limited by max rated TJ. Switching Waveforms and Test Circuit 10V VDD RL OUTPUT 90% INPUT 0V 10% t(ON) PULSE GENERATOR t(OFF) tr td(OFF) tF RGEN td(ON) VDD 10% 10% INPUT D.U.T. OUTPUT 0V 90% 90% 2 2N7002 Typical Performance Curves Output Characteristics 2.0 2.0 Saturation Characteristics VGS = 1.6 10V 9V 1.6 VGS = 10V 9V ID (amperes) 8V 0.8 ID(amperes) 1.2 1.2 8V 0.8 7V 6V 7V 6V 5V 4V 3V 0 2 4 6 8 10 0.4 5V 4V 3V 0 10 20 30 40 50 0.4 0 0 VDS (volts) Transconductance vs. Drain Current 0.5 0.5 VDS (volts) Power Dissipation vs. Temperature 0.4 VDS = 25V 0.4 GFS (siemens) 25OC 0.2 PD (watts) 0.3 TA = -55OC SOT-23 0.3 125OC 0.1 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 1.0 SOT-23 (pulsed) 1.0 TA( OC) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 SOT-23 (DC) ID (amperes) 0.1 0.6 0.4 0.01 TA = 25O C 0.001 0.1 1 10 100 0.2 SOT-23 TA = 25 O C PD = 0.36W 0 0.001 0.01 0.1 1.0 10 VDS (volts) tp (seconds) 3 2N7002 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.1 10 On-Resistance vs. Drain Current 8 VGS = 5V BVDSS (normalized) RDS(ON) (ohms) 6 VGS = 10V 1.0 4 2 0.9 -50 0 50 100 150 0 0 0.5 1.0 1.5 2.0 2.5 Tj (OC) Transfer Characteristics 2.0 ID (amperes) VGS(th) and RDS(ON) Variation with Temperature 2.0 1.4 VDS = 25V 1.6 RDS(ON) @ 10V, 0.5A 1.6 1.2 1.2 1.0 0.8 0.8 1.2 25OC 0.8 VGS(th) @ 1mA 0.4 125OC 0.4 0.6 0 0 2 4 6 8 10 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 50 10 Tj (OC) Gate Drive Dynamic Characteristics f = 1MHz 8 VDS = 10V C (picofarads) VGS (volts) CISS 25 90 pF 6 4 COSS 2 30 pF VDS = 40V CRSS 0 0 10 20 30 40 0 0 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 4 RDS(ON) (normalized) VGS(th) (normalized) TA = -55 C O ID (amperes) 2N7002 TO-236AB Package Outline 0.0173 0.0027 (0.4394 0.0685) 0.0906 0.0079 (2.299 0.199) 1 3 0.0512 0.004 2 (1.3004 0.1016) Measurement Legend = 0.0207 0.003 Dimensions in Inches (Dimensions in Millimeters) 0.0754 0.0053 (1.915 0.135) (0.5257 0.0762) Top View 0.115 0.005 (2.920 0.121) 0.0400 0.007 (1.016 0.178) 0.0210 0.003 (0.5334 0.076) 0.0382 0.003 (0.9690 0.0762) 0.0043 0.0009 (0.1092 0.0229) 0.0035 0.0025 (0.0889 0.0635) 0.0197 (0.50) NOM Side View End View (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-2N7002 A042507 5 |
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